SHENZHEN LONGJINGWEI SEMICONDUCTOR CO.,LTD
TO-92 Plastic-Encapsulate Transistors =
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== FEATURE
=
z NPN silicon epitaxial planar transistor for switching and =
=Amplifier applications
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z As complementary type, the PNP transistor 2N3906 is
=
Recommended =
=z This transistor is also available in the SOT-23 case with
== 2N3904 TRANSISTOR (NPN)
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
the type designation MMBT3904
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
1
23
Symbol Parameter Value Units VCBOVCEO V EBO
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
60 40 6 0.2 0.625 150 -55-150
V V V A W ℃℃ IC P C
TJ T stg
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE1 hFE2 hFE3
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Delay Time Rise Time Storage Time Fall Time
VCE(sat) VBE(sat) fT
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Test conditions
MIN
TYP
MAX
UNIT
IC=10μA, IE0 60 V IC= 1mA , IB0 40 V IE= 10μA, IC0 6 V VCB=60V, IE0 0.1 μA
VCE= 40V, IB0 0.1 μA
VEB= 5V, IC0 0.1 μA
VCE=1V, IC10mA 100 400 VCE=1V, IC50mA 60 VCE=1V, IC100mA 30 IC=50mA, IB5mA 0.3 V IC=50mA, IB5mA 0.95V VCE=20V,IC10mA,f100MHz 300 MHZ
VCC=3V,VBE=0.5V, 35 ns td trtf
IC=10mA,IB1=1mA IB1=IB2=1mA
35 ns VCC=3V, IC=10mA ts 200 ns 50 ns CLASSIFICATION OF hFE1
Rank Range
O Y G 100-200 200-300 300-400
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