BF91404 Datasheet

BYD Microelectronics Co., Ltd.

40V N-Channel MOSFET

General Description

This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

Features

z VDS =40V z ID =100A z Typical RDS(ON) =2.5m Ω (VGS=10V,ID=50A) z Fast switching

z 100% avalanche tested z Improved dv/dt capability

Absolute Maximum Ratings

Symbol Parameter VDS Drain-Source Voltage ID IDM

Drain Current(continuous)at Tc=25℃

Drain Current (package limited)

（Note1）

Single Pulse Avalanche Energy （Note2）Avalanche Current （Note1）Repetitive Avalanche Energy （Note1）Power Dissipation (TC = 25°C) Power Dissipation (TC =100°C)

Maximum Lead Temperature for Soldering Purpose

Value 40

Unit V

100 A Drain Current(continuous)at Tc=100℃ 90 A 400 A ±20 V 1300 mJ 40 A 25 mJ 400 220 -55 to +175

300

W W ℃ ℃

VGS Gate-Source Voltage EAS IAR EAR PD

TJ,Tstg Operating junction and Storage Temperature Range TL

Datasheet TS-MOS-PD-0061 Rev.A/0 Page 1 of 6

BYD Microelectronics Co., Ltd.

BF91404

Ordering Information Part Number BF91404 Package Packaging TO-220 Tube Thermal Data Symbol Parameter

Rthj-Case Thermal Resistance Junction-Case =Rthj-Amb Thermal Resistance Junction-Ambient

Max. 0.3 55.0

Unit ℃/W ℃/W

Electrical Characteristics(Tc = 25℃) Symbol Parameter V(BR)DSS IDSS IGSS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current

Test Conditions

Min. Typ. Max.

Unit

ID=250uA, VGS0V 40 V VDS=40V, VGS=0V,Tc=25℃ 1 uA

VGS(th) Gate Threshold Voltage RDS(on)

VDS=40V,VGS=0V ,Tc=125℃ 10 uA==VGS=±20V ,VDS0V ±100nA=VDS=VGS ,ID250uA 2 4 V VGS=10V ,ID50A 2.5 4 mΩ= 9100 pFVDS=20V,f=1MHZ,VGS=0V

823 pF

152

pF

Static Drain-Source On Resistance

Ciss Input Capacitance Coss Output Capacitance Crss

Reverse Transfer Capacitance

td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg

Total Gate Charge

VDD=32V, ID=100A

VGS=10V （Note3，4）VDD=20V,VGS=10V ,RG=7Ω （Note3，4）

54 ns 75 ns 150 ns 73 ns 98 nC 28 nC 40 nC

VDD=20V,IF=100A,di/dt=100A/us

（Note3）

Qgs Gate-Source Charge Qgd Gate-Drain Charge VSD(*) Trr

Forward On Voltage Reverse Recovery Time

ISD=80A ,VGS0V 1.5 V

28 ns

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. VDD = 20V, RG = 25Ω, Starting TJ = 25°C

3. Pulse Test : Pulse width ≤ 300μs, duty cycle ≤ 2% 4. Essentially independent of operating temperature (*)Pulsed:Pulse duration

Datasheet TS-MOS-PD-0061 Rev.A/0 Page 2 of 6

BYD Microelectronics Co., Ltd.

BF91404

Typical characteristics (25℃ unless noted) Figure 1 Output Characteristics Figure 2 Transfer Characteristics

Figure 3 Normalized Threshold Voltage Figure 4 Normalized BVDSS vs.Temperature

vs.Temperature

.

Figure 5 Normalized on Resistance Figure 6 Source-Drain Diode Forward

vs Temperature Characteristics

Datasheet TS-MOS-PD-0061 Rev.A/0 Page 3 of 6

BYD Microelectronics Co., Ltd.

BF91404

Figure 7 Capacitance Figure 8 Gate Charge

Figure 9 Safe Operating Area Figure 10 Maximum Drain Current

vs Case Temperature

Figure 11 Normalized Maximum Transient Thermal Impedance

1Normalized Thermal Response ZθJC(t)D=0.50

0.200.100.10.050.020.010.0001SINGLE PULSE(THERMAL RESPONSE)Notes:1. Duty factor D = t1 / t22. Peak TJ = PDM x ZthJC + Tc1100.010.000010.0010.010.1t1, Square Wave Pulse Duration [sec] Datasheet TS-MOS-PD-0061 Rev.A/0 Page 4 of 6

BYD Microelectronics Co., Ltd.

BF91404

Package Drawing DAC1FΦ

L1b1A1bLee1C

E1

Symbol A A1 b b1 c c1 D E E1 e e1 F L L1 Φ

Dimensions In Millimeters

Dimensions In Inches

Min Max Min Max 4.45 4.55 0.175 0.179 2.38 2.42 0.093 0.095 0.70 0.90 0.028 0.035 1.42 1.62 0.056 0.064 0.45 0.55 0.018 0.022 1.25 1.35 0.049 0.053 9.85 9.95 0.388 0.392 12.85 12.95 0.506 0.510 9.11 9.29 0.359 0.366 2.540TYP 0.100TYP 5.04 5.12 0.198 0.202 12.98 13.18 0.511 0.519 2.77 2.83 0.109 0.111 2.97 3.03 0.117 0.119 3.58 3.62 0.141 0.143

Datasheet TS-MOS-PD-0061 Rev.A/0 Page 5 of 6

E BYD Microelectronics Co., Ltd.

BF91404

RESTRICTIONS ON PRODUCT USE

󰂄 󰂄 The information contained herein is subject to change without notice. BYD Microelectronics Co., Ltd. (short for BME) exerts the greatest possible effort to ensure high quality and reliability. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing BME products, to comply with the standards of safety in making a safe design for the entire system, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue. In developing your designs, please ensure that BME products are used within specified operating ranges as set forth in the most recent BME products specifications. The BME products listed in this document are intended for usage in general electronics applications (personal equipment, office equipment, domestic appliances, etc.). These BME products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of BME products listed in this document shall be made at the customer’s own risk. BME is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. 󰂄 󰂄 Datasheet TS-MOS-PD-0061 Rev.A/0 Page 6 of 6