METHOD FOR FABRICATING A THROUGH WIRE INTERCONNECT

专利名称：METHOD FOR FABRICATING A THROUGH

WIRE INTERCONNECT (TWI) ON ASEMICONDUCTOR SUBSTRATE HAVING ABONDED CONNECTION AND ANENCAPSULATING POLYMER LAYER

发明人：David R Hembree,Alan G. Wood申请号：US14050535申请日：20131010

公开号：US20140038406A1公开日：20140206

专利附图：

摘要：A method for fabricating a through wire interconnect for a semiconductorsubstrate having a substrate contact includes the steps of: forming a via through thesemiconductor substrate from a first side to a second side thereof; placing a wire in thevia having a first end with a bonded connection to the substrate contact and a second endproximate to the second side; forming a first contact on the wire proximate to the firstside; forming a second contact on the second end of the wire; and forming a polymerlayer on the first side at least partially encapsulating the wire while leaving the firstcontact exposed.

申请人：Micron Technology, Inc.

地址：Boise ID US

国籍：US

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