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BZX84J2V4B资料

2022-05-23 来源:钮旅网
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BZX84J series

Single Zener diodes

Rev. 01 — 1 March 2007

Product data sheet

1.Product profile

1.1General description

General-purpose Zener diodes in a SOD323F (SC-90) very small and flat leadSurface-Mounted Device (SMD) plastic package.

1.2Features

INon-repetitive peak reverse powerdissipation:≤40W

ITotal power dissipation:≤550mWITwo tolerance series:±2%and±5%

IWide working voltage range: nominal2.4Vto75V (E24range)ILow differential resistance

ISmall plastic package suitable forsurface-mounted design

1.3Applications

IGeneral regulation functions

1.4Quick reference data

Table 1.SymbolVFPZSM

[1][2]

Quick reference dataParameterforward voltagenon-repetitive peak reversepower dissipation

ConditionsIF=100mA[1][2]

Min--

Typ--

Max1.140

UnitVW

Pulse test: tp≤300µs;δ≤0.02.

tp=100µs; square wave; Tj=25°C prior to surge

2.Pinning information

Table 2.Pin12

Pinning

Descriptioncathodeanode

[1]Simplified outline12Symbol12

006aaa152[1]The marking bar indicates the cathode.

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NXP Semiconductors

BZX84J series

Single Zener diodes

3.Ordering information

Table 3.

Ordering information

PackageNameBZX84J-B2V4 toBZX84J-C75[1]

[1]

Type numberDescriptionplastic surface-mounted package; 2leadsVersionSOD323FSC-90The series consists of 74types with nominal working voltages from 2.4V to75V.

4.Marking

Table 4.

Marking codes

MarkingcodeSLSMSTSUSVSWSZTATDTETHTKTMTNTPS8S9SASBType numberBZX84J-B15BZX84J-B16BZX84J-B18BZX84J-B20BZX84J-B22BZX84J-B24BZX84J-B27BZX84J-B30BZX84J-B33BZX84J-B36BZX84J-B39BZX84J-B43BZX84J-B47BZX84J-B51BZX84J-B56BZX84J-B62BZX84J-B68BZX84J-B75-MarkingcodeSCSDSESFSGSHSKSNSPSRSSSXSYTBTCTFTGTL-Type numberBZX84J-C2V4BZX84J-C2V7BZX84J-C3V0BZX84J-C3V3BZX84J-C3V6BZX84J-C3V9BZX84J-C4V3BZX84J-C4V7BZX84J-C5V1BZX84J-C5V6BZX84J-C6V2BZX84J-C6V8BZX84J-C7V5BZX84J-C8V2BZX84J-C9V1BZX84J-C10BZX84J-C11BZX84J-C12BZX84J-C13MarkingcodeU3U4U9UAUBUCUFUGULUMURUSUUUVUWTRTSTTTUType numberBZX84J-C15BZX84J-C16BZX84J-C18BZX84J-C20BZX84J-C22BZX84J-C24BZX84J-C27BZX84J-C30BZX84J-C33BZX84J-C36BZX84J-C39BZX84J-C43BZX84J-C47BZX84J-C51BZX84J-C56BZX84J-C62BZX84J-C68BZX84J-C75-MarkingcodeTVTWTXTYTZU1U2U5U6U7U8UDUEUHUKUNUPUT-Type numberBZX84J-B2V4BZX84J-B2V7BZX84J-B3V0BZX84J-B3V3BZX84J-B3V6BZX84J-B3V9BZX84J-B4V3BZX84J-B4V7BZX84J-B5V1BZX84J-B5V6BZX84J-B6V2BZX84J-B6V8BZX84J-B7V5BZX84J-B8V2BZX84J-B9V1BZX84J-B10BZX84J-B11BZX84J-B12BZX84J-B13BZX84J_SER_1© NXP B.V. 2007. All rights reserved.

Product data sheetRev. 01 — 1 March 20072 of 12

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BZX84J series

Single Zener diodes

5.Limiting values

Table 5.Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).SymbolIFIZSM

Parameterforward currentnon-repetitive peak reversecurrent

non-repetitive peak reversepower dissipationtotal power dissipationjunction temperatureambient temperaturestorage temperature

tp=100µs; square wave; Tj=25°C prior to surge

Device mounted on an FR4Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad forcathode 1cm2.

[1]

ConditionsMin--

Max250seeTable8and940550150+150+150

UnitmAPZSMPtotTjTambTstg

[1][2]

[1]---−65−65

WmW°C°C°C

Tamb≤25°C

[2]

6.Thermal characteristics

Table 6.SymbolRth(j-a)Rth(j-sp)

[1][2]

Thermal characteristicsParameterthermal resistance fromjunction to ambientthermal resistance fromjunction to solder point

Conditionsin free air[1]Min--

Typ--

Max23055

UnitK/WK/W

[2]

Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.Soldering point of cathode tab.

7.Characteristics

Table 7.Characteristics

Tj=25°C unless otherwise specified.SymbolVF

Parameterforward voltage

IF=10mAIF=100mA

[1]

Pulse test: tp≤300µs;δ≤0.02.

Conditions[1]Min--

Typ--

Max0.91.1

UnitVV

BZX84J_SER_1© NXP B.V. 2007. All rights reserved.

Product data sheetRev. 01 — 1 March 20073 of 12

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BZX84J series

Single Zener diodes

Table 8.Characteristics per type; BZX84J-B2V4 to BZX84J-C24Tj=25°C unless otherwise specified.BZX84JSel-xxxWorkingvoltageVZ(V)IZ=5mAMin2V42V73V03V33V63V94V34V75V15V66V26V87V58V29V1101112

BCBCBCBCBCBCBCBCBCBCBCBCBCBCBCBCBCBC

BZX84J_SER_1

Differentialresistancerdif(Ω)IZ=1mAIZ=5mAMax400450500500500500600500480400150808080100150150150

Max10010095959090908060401015101010101010

ReversecurrentIR(µA)TemperaturecoefficientSZ(mV/K)IZ=5mADiodeNon-repetitivecapacitancepeak reversecurrentC(pF)[1]dIZSM(A)[2]Max12121212121212121212121244332.52.5

Max2.452.62.752.93.063.23.373.53.673.83.984.14.394.64.7955.25.45.7166.326.66.947.27.657.98.368.79.289.610.210.611.211.612.212.7

Max50201055333213210.70.50.20.10.1

VR(V)Min111111122244556788

−3.5−3.5−3.5−3.5−3.5−3.5−3.5−3.5−2.7−20.41.22.53.23.84.55.46

Max00000000.21.22.53.74.55.36.278910

Max450440425410390370350325300275250215170150120110108105

2.352.22.652.52.942.83.233.13.533.43.823.74.2144.614.454.85.495.26.085.86.666.47.3578.047.78.928.59.89.410.810.411.811.4

© NXP B.V. 2007. All rights reserved.

Product data sheetRev. 01 — 1 March 20074 of 12

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BZX84J series

Single Zener diodes

Table 8.Characteristics per type; BZX84J-B2V4 to BZX84J-C24 …continuedTj=25°C unless otherwise specified.BZX84JSel-xxxWorkingvoltageVZ(V)IZ=5mAMin13151618202224

BCBCBCBCBCBCBC

[1][2]

Differentialresistancerdif(Ω)IZ=1mAIZ=5mAMax170200200225225250250

Max10152020202530

ReversecurrentIR(µA)TemperaturecoefficientSZ(mV/K)IZ=5mADiodeNon-repetitivecapacitancepeak reversecurrentC(pF)[1]dIZSM(A)[2]Max2.521.51.51.51.251.25

Max13.314.115.315.616.317.118.419.120.421.222.423.324.525.6

Max0.10.050.050.050.050.050.05

VR(V)Min810.511.212.61415.416.8

79.210.412.414.416.418.4

Max11131416182022

Max103999793888480

12.712.414.713.815.715.317.616.819.618.821.620.823.522.8

f=1MHz; VR=0V

tp=100µs; square wave; Tj=25°C prior to surge

BZX84J_SER_1© NXP B.V. 2007. All rights reserved.

Product data sheetRev. 01 — 1 March 20075 of 12

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BZX84J series

Single Zener diodes

Table 9.Characteristics per type; BZX84J-B27 to BZX84J-C75Tj=25°C unless otherwise specified.BZX84J-SelxxxWorkingvoltageVZ(V)IZ=2mAMin273033363943475156626875

BCBCBCBCBCBCBCBCBCBCBCBC

[1][2]

Differentialresistancerdif(Ω)IZ=0.5mAIZ=2mAMax250250275300300325325350375400400400

Max40404060758090110120140160175

ReversecurrentIR(µA)TemperaturecoefficientSZ(mV/K)IZ=2mADiodeNon-repetitivecapacitancepeak reversecurrentC(pF)[1]dIZSM(A)[2]Max110.90.80.70.60.50.40.30.30.250.2

Max27.528.930.63233.73536.73839.84143.94647.950525457.16063.26669.47276.579

Max0.050.050.050.050.050.050.050.050.050.050.050.05

VR(V)Min18.92123.125.227.330.132.935.739.243.447.652.5

21.424.427.430.433.437.64246.652.258.865.673.4

Max25.329.433.437.441.246.651.857.263.871.679.888.6

Max736660595856555249444035

26.525.129.42832.33135.33438.23742.14046.144504854.95260.85866.66473.570

f=1MHz; VR=0V

tp=100µs; square wave; Tj=25°C prior to surge

BZX84J_SER_1© NXP B.V. 2007. All rights reserved.

Product data sheetRev. 01 — 1 March 20076 of 12

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BZX84J series

Single Zener diodes

103PZSM(W)mbg801300IF(mA)200mbg781102(1)10(2)100110−11tp (ms)1000.60.8VF (V)1(1)Tj=25°C (prior to surge)(2)Tj=150°C (prior to surge)Tj=25°CFig 1.Non-repetitive peak reverse power dissipationas a function of pulse duration; maximumvalues0.5SZ(mV/K)04V7mld444Fig 2.Forward current as a function of forwardvoltage; typical values12SZ(mV/K)815mld4454V3−0.52V42V7−13V94131211109V18V27V56V86V25V65V13V6−1.53V33V00−210−1110IZ (mA)102−410−1110IZ (mA)102BZX84J-B/C2V4 to BZX84J-B/C4V7Tj=25°Cto150°CBZX84J-B/C5V1 to BZX84J-B/C15Tj=25°Cto150°CFig 3.Temperature coefficient as a function ofworking current; typical valuesFig 4.Temperature coefficient as a function ofworking current; typical valuesBZX84J_SER_1© NXP B.V. 2007. All rights reserved.

Product data sheetRev. 01 — 1 March 20077 of 12

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BZX84J series

Single Zener diodes

50IZ(mA)40006aaa996VZ(nom) (V) = 2.73.33.94.75.66.88.2VZ(nom) (V) = 10IZ(mA)251230006aaa9972030152010101852227333615002468VZ (V)1000102030VZ (V)40Tj=25°CBZX84J-B/C2V7 to BZX84J-B/C8V2All curves have a test current IZ=5mA.Tj=25°CBZX84J-B/C10 to BZX84J-B/C36For the curves VZ(nom)=(10, 12, 15, 18, 22)V thetest current IZ=5mA.For the curves VZ(nom)=(27, 33, 36)V the testcurrent IZ=2mA.Fig 5.Working current as a function of workingvoltage; typical valuesFig 6.Working current as a function of workingvoltage; typical valuesBZX84J_SER_1© NXP B.V. 2007. All rights reserved.

Product data sheetRev. 01 — 1 March 20078 of 12

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NXP Semiconductors

BZX84J series

Single Zener diodes

8.Package outline

1.351.1510.50.30.800.652.72.31.81.620.400.25Dimensions in mm0.250.1004-09-13Fig 7.Package outline SOD323F(SC-90)9.Packing information

Table 10.Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.[1]Type numberPackageDescription4mm pitch, 8mm tape and reelPacking quantity3000BZX84J-B2V4toSOD323FBZX84J-C75

[1]

10000-135-115For further information and the availability of packing methods, seeSection13.

10.Soldering

3.052.802.101.60solder landssolder resist1.650.950.500.60occupied areasolder paste0.50(2×)msa433Reflow soldering is the only recommended soldering method.Dimensions in mmFig 8.Reflow soldering footprint SOD323F(SC-90)BZX84J_SER_1© NXP B.V. 2007. All rights reserved.

Product data sheetRev. 01 — 1 March 20079 of 12

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NXP Semiconductors

BZX84J series

Single Zener diodes

11.Revision history

Table 11.

Revision history

Release date20070301

Data sheet statusProduct data sheet

Change notice-Supersedes-Document IDBZX84J_SER_1

BZX84J_SER_1© NXP B.V. 2007. All rights reserved.

Product data sheetRev. 01 — 1 March 200710 of 12

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BZX84J series

Single Zener diodes

12.Legal information

12.1Data sheet status

Document status[1][2]Objective [short] data sheetPreliminary [short] data sheetProduct [short] data sheet

[1][2][3]

Product status[3]DevelopmentQualificationProduction

DefinitionThis document contains data from the objective specification for product development.This document contains data from the preliminary specification.This document contains the product specification.

Please consult the most recently issued document before initiating or completing a design.The term ‘short data sheet’ is explained in section “Definitions”.

Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatusinformation is available on the Internet at URLhttp://www.nxp.com.

12.2Definitions

Draft —The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. NXP Semiconductors does not give anyrepresentations or warranties as to the accuracy or completeness of

informationincludedhereinandshallhavenoliabilityfortheconsequencesofuse of such information.

Short data sheet —A short data sheet is an extract from a full data sheetwiththesameproducttypenumber(s)andtitle.Ashortdatasheetisintendedforquickreferenceonlyandshouldnotbereliedupontocontaindetailedandfull information. For detailed and full information see the relevant full datasheet, which is available on request via the local NXP Semiconductors salesoffice. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.

malfunctionofaNXPSemiconductorsproductcanreasonablybeexpectedtoresult in personal injury, death or severe property or environmental damage.NXP Semiconductors accepts no liability for inclusion and/or use of NXPSemiconductors products in such equipment or applications and thereforesuch inclusion and/or use is at the customer’s own risk.

Applications —Applications that are described herein for any of theseproducts are for illustrative purposes only. NXP Semiconductors makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

Limiting values —Stress above one or more limiting values (as defined intheAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanentdamagetothedevice.Limitingvaluesarestressratingsonlyandoperationofthe device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limitingvalues for extended periods may affect device reliability.

Terms and conditions of sale —NXP Semiconductors products are soldsubjecttothegeneraltermsandconditionsofcommercialsale,aspublishedathttp://www.nxp.com/profile/terms, including those pertaining to warranty,intellectual property rights infringement and limitation of liability, unlessexplicitly otherwise agreed to in writing by NXP Semiconductors. In case ofany inconsistency or conflict between information in this document and suchterms and conditions, the latter will prevail.

No offer to sell or license —Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance or thegrant,conveyanceorimplicationofanylicenseunderanycopyrights,patentsor other industrial or intellectual property rights.

12.3Disclaimers

General —Information in this document is believed to be accurate and

reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsorwarranties,expressedorimplied,astotheaccuracyorcompletenessofsuchinformation and shall have no liability for the consequences of use of suchinformation.

Right to make changes —NXPSemiconductorsreservestherighttomakechanges to information published in this document, including without

limitation specifications and product descriptions, at any time and withoutnotice.Thisdocumentsupersedesandreplacesallinformationsuppliedpriorto the publication hereof.

Suitability for use —NXP Semiconductors products are not designed,authorized or warranted to be suitable for use in medical, military, aircraft,space or life support equipment, nor in applications where failure or

12.4Trademarks

Notice:Allreferencedbrands,productnames,servicenamesandtrademarksare the property of their respective owners.

13.Contact information

For additional information, please visit:http://www.nxp.com

For sales office addresses, send an email to:salesaddresses@nxp.com

BZX84J_SER_1© NXP B.V. 2007. All rights reserved.

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14.Contents

1Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 11.1General description. . . . . . . . . . . . . . . . . . . . . . 11.2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4Quick reference data. . . . . . . . . . . . . . . . . . . . . 12Pinning information. . . . . . . . . . . . . . . . . . . . . . 13Ordering information. . . . . . . . . . . . . . . . . . . . . 24Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 36Thermal characteristics. . . . . . . . . . . . . . . . . . . 37Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 38Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 99Packing information. . . . . . . . . . . . . . . . . . . . . . 910Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 911Revision history. . . . . . . . . . . . . . . . . . . . . . . . 1012Legal information. . . . . . . . . . . . . . . . . . . . . . . 1112.1Data sheet status . . . . . . . . . . . . . . . . . . . . . . 1112.2Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1112.3Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 1112.4Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 1113Contact information. . . . . . . . . . . . . . . . . . . . . 1114

Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

BZX84J series

Single Zener diodes

Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s)described herein, have been included in section ‘Legal information’.

© NXP B.V.2007.All rights reserved.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 1 March 2007

Document identifier: BZX84J_SER_1

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