Si3437DV
New Product
S
Vishay Siliconix
P-Channel 150-V (D-S) MOSFET
FEATURES
ID (A)- 1.4- 1.3
a
PRODUCT SUMMARY
VDS (V)- 150
rDS(on) (Ω)0.75 at VGS = - 10 V 0.79 at VGS = - 6 V
Qg (Typ)8 nC
•TrenchFET® Power MOSFET •100 % Rg and UIS Tested
RoHSAPPLICATIONS
•Active Clamp Circuits in DC/DC Power Supplies
COMPLIANTS
TSOP-6 Top View S D 1 6 D 3 mm D 2 5 D Marking Code AHXXXG Lot Traceab ility and Date Code G 3 4 S 2. 85 mm Part # Code D P-Channel MOSFET Ordering Information: Si3437DV -T1-E3 (Lead (P b) -free) Parameter ymbol Limit Unit VDSDrain-Source Voltage - 150
V
VGS± 20Gate-Source Voltage
TC = 25 °C- 1.4
- 1.1TC = 70 °C
Continuous Drain Current (TJ = 150 °C)ID
TA = 25 °C- 1.1b,cTA = 70 °C- 0.88b,cA
IDM- 5Pulsed Drain Current
- 2.6TC = 25 °C
ISContinuous Source-Drain Diode Current
TA = 25 °C1.6b,cIASAvalanche Current5
L = 0.1 mH
mJEASSingle-Pulse Avalanche Energy1.25
3.2TC = 25 °C
2.1TC = 70 °C
PDMaximum Power DissipationW
TA = 25 °C2b,cTA = 70 °C1.25b,c
TJ, TstgOperating Junction and Storage Temperature Range - 55 to 150°C
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
THERMAL RESISTANCE RATINGS
Parameter ymbol Typical Maximum Unit RthJAt ≤ 5 sec5162.5Maximum Junction-to-Ambientb, d
°C/W
RthJF3239Maximum Junction-to-FootSteady State Notes:
a.TC = 25 °C.
b.Surface Mounted on 1\" x 1\" FR4 board.c.t = 5 sec.
d.Maximum under Steady State conditions is 110 °C/W.Document Number: 73899S-62238–Rev. A, 06-Nov-06
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Si3437DV
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise notedStaticDrain-Source Breakdown VoltageVDS Temperature CoefficientVGS(th) Temperature CoefficientGate-Source Threshold VoltageGate-Source LeakageZero Gate Voltage Drain CurrentOn-State Drain CurrentaDrain-Source On-State ResistanceaForward TransconductanceaDynamicbInput CapacitanceOutput CapacitanceReverse Transfer CapacitanceTotal Gate ChargeGate-Source ChargeGate-Drain ChargeGate ResistanceTurn-On Delay TimeRise TimeTurn-Off DelayTimeFall TimeVDSΔVDS/TJΔVGS(th)/TJVGS(th) IGSSIDSSID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rgtd(on) trtd(off) tfVDD = - 75 V, RL = 75 Ω ID ≅ - 1 A, VGEN = - 6 V, Rg = 1 ΩVDD = - 75 V, RL = 75 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ωf = 1 MHzVDS = - 75 V, VGS = - 10 V, ID = - 1 AVDS = - 75 V, VGS = - 6 V, ID = - 1 AVDS = - 50 V, VGS = 0 V, f = 1 MHzVGS = 0 V, ID = - 250 µA ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 20 V VDS = - 150 V, VGS = 0 V VDS = - 150 V, VGS = 0 V, TJ = 55 °C VDS ≥ - 10 V, VGS = - 10 VVGS = - 10 V, ID = - 1.4 A VGS = - 6 V, ID = - 1 A VDS = - 10 V, ID = - 1.4 A - 30.610.644.5510302112.282.13.98.5911281214292314TC = 25 °CIS = - 1 A, VGS = 0 VIF = - 1.2 A, di/dt = 100 A/µs, TJ = 25 °C- 0.8601203525131518421821443521- 1.4- 5- 1.290180nsΩ1912nCpF0.750.79- 2- 150- 1605.5- 4± 100- 1- 10VmV/°CVnAµAAΩSParameter ymbol Test Conditions Min TypMaxUnit td(on) Turn-On Delay TimeStrRise Timetd(off) Turn-Off DelayTimeFall TimeDrain-Source Body Diode CharacteristicsContinous Source-Drain Diode CurrentPulse Diode Forward CurrentBody Diode VoltageBody Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeReverse Recovery Fall TimeReverse Recovery Rise TimeISISMVSDtrrQrrtatbtfAVnsnCnsNotes:a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.
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Si3437DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
81.5VGS = 10 thru 6 V6ID– Drain Current (A)ID– Drain Current (A)1.20.945 V0.625 °CTC = 125 °C20.3- 55 °C468002468100.002VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V)Output Characteristics
1.4750Transfer Characteristics
1.2rDS(on)– On-Resistance (Ω)C – Capacitance (pF)600Ciss4501.0VGS = 6 V0.8300Coss0.6VGS = 10 V1500.40.001.63.24.86.48.00ID – Drain Current (A)Crss48121620VDS – Drain-to-Source Voltage (V)On-Resistance vs. Drain Current and Gate Voltage
10VGS– Gate-to-Source Voltage (V)ID = 1 A8VDS = 75 VrDS(on)– On–Resistance2.02.4ID = 1.2 ACapacitance
4VDS = 100 V(Normalized)6VDS = 50 V1.6VGS = 10 V1.2VGS = 6 V20.8002.65.27.810.4130.4- 50- 250255075100125150Qg – Total Gate Charge (nC)TJ– Junction Temperature (°C)Gate ChargeOn-Resistance vs. Junction TemperatureDocument Number: 73899S-62238–Rev. A, 06-Nov-06www.vishay.com
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Si3437DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
105ID = 1.2 A4IS− Source Current (A)1TJ = 150 °CTJ = 25 °CrDS(on)– Drain-to-Source (Ω)3125 °C20.10125 °C00.010.00.30.60.91.21.5VSD− Source-to-Drain Voltage (V)0246810VGS – Gate-to-Source Voltage (V)Source-Drain Diode Forward Voltage
0.860 On-Resistance vs. Gate-to-Source Temperature
0.6VGS(th)- Variance (V)ID = 250 µA rPo w e ( W ) 48 0.436 0.2ID = 5 mA24 0.012 - 0.2- 0.4- 500 - 2502550751001251500.001 0.01 0.1 1 10Time (sec) TJ – Temperature (°C)Threshold Voltage10*Limited by rDS(on)Single Pulse Power, Junction-to-Ambient
1ID– Drain Current (A)1 ms0.110 ms100 ms0.01TA = 25 °C Single Pulse0.0010.1*VGS100010010VDS – Drain-to-Source Voltage (V) minimum VGS at which rDS(on)isspecified11 s10 sDC Safe Operating Area, Junction-to-Ambient
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Document Number: 73899S-62238–Rev. A, 06-Nov-06
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Si3437DV
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25°C, unless otherwise noted
1.61.3Power (W)1.00.60.30.00255075100125150TC – Case Temperature (°C)Current Derating*4.01.53.21.2Power (W)2.4Power (W)02550751001251500.91.60.60.80.30.00.00255075100125150TC – Case Temperature (°C)TC – Case Temperature (°C)Power, Junction-to-FootPower Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.Document Number: 73899S-62238–Rev. A, 06-Nov-06www.vishay.com
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Si3437DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1Duty Cycle = 0.5Normalized Effective TransientThermal Impedance0.20.10.10.050.02PDMt1Notes:t21. Duty Cycle, D =2. Per Unit Base = RthJA = 75 °C 3. TJM – T = PDMZthJA(t)t1t20.0110-4Single Pulse10-310-210-11Square Wave Pulse Duration (sec)104. Surface Mounted1001000Normalized Thermal Transient Impedance, Junction-to-Ambient
1Duty Cycle = 0.5Normalized Effective TransientThermal Impedance0.20.10.10.050.02Single Pulse0.0110-410-310-210-1Square Wave Pulse Duration (sec)110Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliabilitydata, see http://www.vishay.com/ppg?73899.
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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Document Number: 91000Revision: 18-Jul-08
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