Capacitor of semiconductor device and method for f

专利名称：Capacitor of semiconductor device and

method for forming the same

发明人：Ki Seon Park,Jae Sung Roh申请号：US11068683申请日：20050228公开号：US07074668B1公开日：20060711

专利附图：

摘要：In a method for forming a capacitor for use in a semiconductor device, a nitridefilm for stopping etching, a first mold oxide film, an insulating film, deposited on asubstrate are etched to expose the respective storage node contacts and thereby to

form a plurality of contact holes arrayed in a zigzag pattern for storage electrodes. Asacrificial oxide film is deposited by burying the contact holes for storage electrodes in athickness such that an outer portion of the storage electrodes having a relatively shortinterval is completely buried while an outer portion the storage electrodes having arelatively long interval is not completely buried. The sacrificial oxide film and theinsulation film are etched back to form a support network enclosing the respectivestorage electrodes and interconnected to each other.

申请人：Ki Seon Park,Jae Sung Roh

地址：Kyoungki-do KR,Kyoungki-do KR

国籍：KR,KR

代理机构：Ladas & Parry LLP

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