Dielectrically isolated SiC mosfet

专利名称：Dielectrically isolated SiC mosfet发明人：Anthony D. Kurtz,Andrew V. Bemis申请号：US08/512892申请日：19950809公开号：US05574295A公开日：19961112

摘要：A metal-oxide-semiconductor field-effect transistor (MOSFET) devicecomprising a carrier wafer and a silicon gate region disposed on the carrier wafer. Asource region and a drain region made from 3C- silicon carbide are disposed on thecarrier wafer above the gate region. A gate oxide, derived from silicon, separates thesource and drain regions from the gate region. Laterally oriented oxide trenchesseparate and dielectrically isolate the MOSFET device from other devices on the carrierwafer. Further, the MOSFET device described above is manufactured in a methodcomprising the steps of providing a carrier wafer having an oxide layer formed on asurface thereof. A layer of silicon having a given level of conductivity is bonded to theoxide layer of the carrier wafer. Selected portions of the layer of silicon are oxidized tocreate a plurality of dielectrically isolated silicon islands, one of which forms a gateregion. A layer of silicon dioxide is then formed over the dielectrically isolated islands ofsilicon. Two layers of silicon carbide are then bonded to the layer of silicon dioxide. Asource region and a drain region are each formed from the layers of silicon carbide.Selected portions of one of the two layers of silicon carbide are oxidized to dielectricallyisolate the source region and the drain region from other semiconductor devices locatedon the carrier wafer.

申请人：KULITE SEMICONDUCTOR PRODUCTS

代理机构：Plevy & Associates

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