专利名称：Semiconductor device using a polysilicon
thin film and method for fabrication thereof
发明人：Miura, Hideo,Moribe, Shunji,Kato,
Hisayuki,Koike, Atsuyoshi,Ikeda,Shuji,Nishimura, Asao
申请号：EP02001183.9申请日：19950915公开号：EP1209726A3公开日：20021009
专利附图：
摘要：The invention relates to a semiconductor device containing a polycrystalline
silicon thin film wherein crystal grains of the silicon thin film have mainly a columnastructure and a crystal orientation of individual crystal grains is almost in a uniformdirection can be produced by depositing a non-impurity-doped silicon thin film (3) or animpurity layer on an interface (30) of an underlying film (2), followed by deposition ofimpurity-doped silicon thin film (4), if necessary, followed by heat treatment forpolycrystallization.
申请人：Hitachi, Ltd.
地址：6 Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 101-8010 JP
国籍：JP
代理机构：Beetz & Partner Patentanwälte
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