APM2315Ab1

2023-10-08 来源：钮旅网

APM2315A

P-Channel Enhancement Mode MOSFETFeatures

•

-20V/-4A,

RDS(ON)=35mΩ (typ.) @ VGS=-4.5VRDS(ON)=45mΩ (typ.) @ VGS=-2.5VRDS(ON)=60mΩ (typ.) @ VGS=-1.8V

Pin Description

•••

Super High Dense Cell DesignReliable and Rugged

Lead Free Available (RoHS Compliant)

Top View of SOT-23

SApplications

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered Systems

P-Channel MOSFET

Ordering and Marking Information

APM2315

Lead Free CodeHandling CodeTemp. RangePackage Code

APM2315 A :

M15X

Package Code A : SOT-23

Operating Junction Temp. Range C : -55 to 150 C°Handling Code

TU : Tube TR : Tape & ReelLead Free Code

L : Lead Free Device Blank : Original DeviceX - Date Code

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin platetermination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldieringoperations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020Cfor MSL classification at lead-free peak reflow temperature.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advisecustomers to obtain the latest version of relevant information to verify before placing orders.Copyright © ANPEC Electronics Corp.Rev. B.1 - Aug., 2005

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APM2315A

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Note: Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient 2

Rating -20 ±12 VGS=-4.5V -4 -16 -1.5 150 -55 to 150 TA=25°C TA=100°C 0.83 0.3 150 Unit V A A °C W °C/W *Surface Mounted on 1inpad area, t ≤ 10sec.

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter Test Condition APM2315A Min. -20 -0.5 VDS=-10V, VGS=-4.5V, IDS=-4A Typ. -0.7 35 45 60 -0.75 12 2.1 2.9 Max. -1 -30 -1 ±100 55 72 100 -1.3 16 nC V mΩ Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS=0V, IDS=-250µA VDS=-16V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±10V, VDS=0V VGS=-4.5V, IDS=-4A V µA V nA VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current RDS(ON) a Drain-Source On-state Resistance VGS=-2.5V, IDS=-2.5A VGS=-1.8V, IDS=-2A VSDa Diode Forward Voltage ISD=-0.5A, VGS=0V Gate Charge Characteristics b Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge Copyright © ANPEC Electronics Corp.Rev. B.1 - Aug., 2005

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APM2315A

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

Symbol Parameter Test Condition APM2315A Min. VDD=-10V, RL=10Ω, IDS=-1A, VGEN=-4.5V, RG=6Ω Typ. 8 1135 200 110 6 7 72 45 Max. 12 14 131 82 ns pF Unit Dynamic Characteristics b RG Ciss Coss Crss td(ON) Tr td(OFF) Tf Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%.

b : Guaranteed by design, not subject to production testing.

Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-15V, Frequency=1.0MHz Ω Copyright © ANPEC Electronics Corp.Rev. B.1 - Aug., 2005

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APM2315A

Typical Characteristics

Power Dissipation

Drain Current

1.00.90.80.7

5.04.54.0

-ID - Drain Current (A)3.53.02.52.01.51.00.5

TA=25C,VG=-4.5V0

80100120140160

oPtot - P ower (W)0.60.50.40.30.20.10.0

TA=25C020406080100120140160o 0.0

Tj - Junction Temperature (°C)

Safe Operation Area

Thermal Transient Impedance

nt Thermal ResistanceNormalized Transie3010

Rds(on) Limit21

Duty = 0.50.20.1-ID - Dra in Current (A)300µs1ms1

10ms 0.1

0.050.020.01100ms0.1

1sDC0.01

Single PulseMounted on 1in padoRθJA : 150 C/W2T=25C0.01A0.010.1

10100

1E-3

1E-41E-30.010.1110100-VDS - Drain - Source Voltage (V)

Square Wave Pulse Duration (sec)

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APM2315A

Typical Characteristics (Cont.) Output CharacteristicsDrain-Source On Resistance 161412VGS= -3,-4,-5,-6,-7,-8,-9,-10V160140-2VRDS(ON) - On - R esistance (mΩ)120100806040200-ID - Drain Current (A)VGS= -1.8V108 64200.0VGS= -2.5VVGS= -4.5V-1.5V0.51.01.52.02.53.0048121620 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A)Transfer Characteristics Gate Threshold Voltage 16141.81.6IDS = -250µANormalized Threshold Voltage121.41.21.00.80.60.40.2-ID - Drain Current (A)10864200.0

Tj=25CoTj=125CooTj=-55C 0.51.01.52.02.53.0

0.0-50-250255075100125150-VGS - Gate - Source Voltage (V)

Tj - Junction Temperature (°C)

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APM2315A

Typical Characteristics (Cont.)

Drain-Source On Resistance

Source-Drain Diode Forward

1.8VGS = -4.5V 1.6 IDS = -4A2010

oNormalized On ResistanceTj=150C1.2-IS - Source Current (A)1.4 1.00.80.60.4-50-25

RON@Tj=25C: 35mΩ0

75100125150

0.10.00.30.60.91.21.5

Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Capacitance

Gate Charge

18001600

Frequency=1MHz10

9 I = -4ADVDS= -10V-VGS - Gate - source Voltage (V)1400

8765432100510152025C - Capacitance (pF)12001000800600400

Coss200Crss00

Ciss 1620

-VDS - Drain - Source Voltage (V)

QG - Gate Charge (nC)

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Tj=25CoAPM2315A

Packaging Information

SOT-23

DB3E12HeAA1LCDim A A1 B C D E e H L Millimeters Min. 1.00 0.00 0.35 0.10 2.70 1.40 1.90/2.1 BSC. 2.40 0.37 3.00 Max. 1.30 0.10 0.51 0.25 3.10 1.80 Inches Min. Max. 0.039 0.051 0.000 0.004 0.014 0.020 0.004 0.010 0.106 0.122 0.055 0.071 0.075/0.083 BSC. 0.094 0.118 0.015 Copyright © ANPEC Electronics Corp.Rev. B.1 - Aug., 2005

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APM2315A

Physical Specifications

Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow)

Ramp-uptpCritical ZoneTL to TPTemperatureTL

TsmaxtLTsminRamp-downtsPreheat25

° t 25 C to PeakTime

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate 3°C/second max. 3°C/second max. (TL to TP) Preheat 100°C 150°C - Temperature Min (Tsmin) 150°C 200°C - Temperature Max (Tsmax) 60-120 seconds 60-180 seconds - Time (min to max) (ts) Time maintained above: 183°C 217°C - Temperature (TL) 60-150 seconds 60-150 seconds - Time (tL) Peak/Classificatioon Temperature (Tp) See table 1 See table 2 Time within 5°C of actual 10-30 seconds 20-40 seconds Peak Temperature (tp) Ramp-down Rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright © ANPEC Electronics Corp.Rev. B.1 - Aug., 2005

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APM2315A

Classification Reflow Profiles(Cont.)

Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures Package Thickness Volume mm3 Volume mm3 <350 ≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Temperatures Package Thickness Volume mm3 Volume mm3 Volume mm3 <350 350-2000 >2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level. Reliability Test Program

Test itemSOLDERABILITYHOLTPCTTSTMethodMIL-STD-883D-2003MIL-STD 883D-1005.7JESD-22-B, A102MIL-STD 883D-1011.9Description245°C,5 SEC1000 Hrs Bias @ 125°C168 Hrs, 100% RH, 121°C-65°C ~ 150°C, 200 CyclesCarrier Tape & Reel Dimensions

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APM2315A

Carrier Tape & Reel Dimensions

T2JCABT1ApplicationA178±1SOT-23F3.5 ± 0.05B60 ± 1.0D1.5 +0.1C12.0D1£p0.1MINJT1T21.4Ao3.1W8.0+ 0.3- 0.3Bo3.0P4.0Ko1.3E1.75t0.2±0.032.5 ± 0.159.0 ± 0.5Po4.0P12.0 ± 0.05 (mm)

Cover Tape Dimensions

ApplicationSOT- 23Carrier Width8Cover Tape Width5.3Devices Per Reel3000Customer Service

Anpec Electronics Corp.Head Office :

5F, No. 2 Li-Hsin Road, SBIP,Hsin-Chu, Taiwan, R.O.C.Tel : 886-3-5642000Fax : 886-3-5642050Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,

Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.Tel : 886-2-89191368Fax : 886-2-89191369

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APM2315Ab1