专利名称：PRESSURE SENSOR WITH RESISTANCE
STRAIN GAGES
发明人：Gilles Delapierre,Hubert Grange,Patrice Rey申请号：US12279396申请日：20070126
公开号：US20100031752A1公开日：20100211
专利附图：
摘要：The invention relates to pressure sensors that are micromachined usingmicroelectronics technologies. The sensor provided by the invention comprises a cavity(V) hermetically sealed on one side by a silicon substrate () and on the other side by a
diaphragm () that can be formed under the effect of the pressure outside the cavity, thesensor having at least one resistance strain gage () fastened to the diaphragm and havingresistance that varies as a function of the deformation of the diaphragm. The diaphragm,preferably made of silicon nitride, is fastened to the resistance strain gages. The gagesare located beneath the diaphragm inside the sealed cavity (V). It is not necessary torecess the substrate to produce the cavity: the diaphragm is formed by depositing aninsulting layer on a sacrificial layer, for example made of a polyamide; it may coverintegrated measurement circuits in the silicon substrate.
申请人：Gilles Delapierre,Hubert Grange,Patrice Rey
地址：Seyssins FR,Grenoble FR,St Jean De Moirans FR
国籍：FR,FR,FR
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容