Reticle mask exposure method comprising blank to r

专利名称：Reticle mask exposure method comprising

blank to remove incomplete circuits

发明人：Koji Nakagawa申请号：US08/009070申请日：19930126公开号：US05362583A公开日：19941108

摘要：A reticle mask comprising: an exposure pattern for forming a unit for integratedcircuits; and a window serving as a blank pattern, said window serving as a blank patternexisting in a region except the exposure pattern; and a method for exposing a pattern forintegrated circuits which comprises the steps of: shielding said reticle mask at theexposure pattern for forming the units for integrated circuits; positioning and exposingthe blank pattern over an incomplete pattern existing at the periphery of the photoresistfilm; and removing the exposed incomplete pattern by development.

申请人：SHARP KABUSHIKI KAISHA

代理机构：Nixon & Vanderhye

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