IS2702-1资料

IS2702-1HIGH DENSITY MOUNTING PHOTODARLINGTONOPTICALLY COUPLED ISOLATORSDESCRIPTIONThe IS2702-1 is an optically coupled isolatorconsisting of an infrared light emitting diode andNPN silicon photodarlington in a space efficientdual in line plastic package.FEATURESlllllDimensions in mmMarked as FPD1.Current Transfer Ratio MIN. 600%Isolation Voltage (3.75kVRMS ,5.3kVPK )All electrical parameters 100% testedDrop in replacement for NEC PS2702-1APPLICATIONSlComputer terminalslIndustrial systems controllerslMeasuring instrumentslSignal transmission between systems ofdifferent potentials and impedancesISOCOM COMPONENTS LTDUnit 25B, Park View Road West,Park View Industrial Estate, Brenda RoadHartlepool, Cleveland, TS25 1YDTel: (01429) 863609 Fax :(01429) 86358122/4/02ISOCOM INC1024 S. Greenville Ave, Suite 240,Allen, TX 75002 USATel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com DB92860l-AAS/A3元器件交易网www.cecb2b.com

ABSOLUTE MAXIMUM RATINGS(25°C unless otherwise specified)

Storage Temperature-55°C to + 150°COperating Temperature-55°C to + 100°CLead Soldering Temperature(1/16 inch (1.6mm) from case for 10 secs) 260°CINPUT DIODEForward CurrentReverse VoltagePower Dissipation50mA6V70mWOUTPUT TRANSISTORCollector-emitter Voltage BVCEOEmitter-collector Voltage BVECOPower DissipationPOWER DISSIPATIONTotal Power Dissipation(derate linearly 2.26mW/°C above 25°C)35V6V150mW170mWELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )PARAMETERInputForward Voltage (VF)Reverse Voltage (VR)Reverse Current (IR)Collector-emitter Breakdown (BVCEO)Emitter-collector Breakdown (BVECO)Collector-emitter Dark Current (ICEO)CoupledCurrent Transfer Ratio (CTR)MINTYPMAXUNITS TEST CONDITION1.2 51035 6160075001.4VVµAVVuA%IF = 20mAIR = 10µAVR = 4VIC = 0.1mAIE = 10uAVCE = 10V1mA IF , 2V VCE20mA IF , 1mA ICSee note 1See note 1VIO = 500V (note 1)VCE = 2V ,IC = 2mA, RL = 100ΩOutputCollector-emitter Saturation VoltageVCE (SAT)Input to Output Isolation Voltage VISO 3750 5300Input-output Isolation Resistance RISO 5x1010Output Rise TimetrOutput Fall Timetf1VVRMSVPK431818ΩµsµsNote 1Measured with input leads shorted together and output leads shorted together.

22/4/02

DB92860l-AAS/A3

元器件交易网www.cecb2b.com

TAPING DIMENSIONS

Description

Tape wide

Pitch of sprocket holes Distance of compartment

Distance of compartment to compartment

Symbol W P0 F P2 P1

Dimensions in mm ( inches )

12 ± 0.3 ( .47 ) 4 ± 0.1 ( .15 ) 5.5 ± 0.1 ( .217 ) 2 ± 0.1 ( .079 ) 8 ± 0.1 ( .315 )

12/07/01 Appendix to Mini Flat Pack FPD-AAS/A1

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CHARACTERISTIC CURVES

Fig.1 Forward Current vs. Ambient Temperature6050)Am( F40I tnerr30uc dra20wroF100-550255075100125Ambient temperature Ta ( C)OFig.3 Collector-emitter SaturationVoltage vs. Forward Current8oeg7ATa=25 CaAmAmmtl0o53v n67oitaru5AmAta1m3s r4ettim3Ame5-.ro)ttna20=cesIr(ruECCV1000.51.01.52.02.53.03.54.0Forward current IF (mA)Fig.5 Current Transfer Ratio vs. Forward Current5000VCE=2V)Ta=25 Co%(4000 RTC oi3000tar refsn2000art tnerru1000C00.10.20.512510Forward current IF (mA)

12/07/01 Appendix to Mini Flat Pack FPD-AAS/A1

Fig.2 Collector Power Dissipation vs.Ambient Temperature200)Wm( cP150 noitapiss100id rewop r50otcelloC0-550255075100125Ambient temperature Ta ( C)OFig.4 Forward Current vs. ForwardVoltage500Ta=75 Co)200oA50 Co25 Cm(1000 Co F-25 CoI 50tnerruc20 dra10wroF52100.51.01.52.02.53.0Forward voltage VF (V)Fig.6 Collector Current vs.Collector-emitter Voltage100IF=10mATa=25 Co)A80m5mA( CPc(MAX.)I t60ner2mAruc ro401mAtcelloC200012345Collector-emitter voltage VCE (V) 元器件交易网www.cecb2b.com

CHARACTERISTIC CURVES

Fig.7 Relative Current Transfer Ratiovs. Ambient Temperature150)%IF=1mAVCE=2V( oitar re100fsnart tnerruc50 evitaleR 020406080100Ambient temperature Ta ( C)oFig.9 Collector Dark Current vs.Ambient Temperature100000CE)V=20VAn(O10000ECI tne1000rruc kra100d rtocell10oC120406080100Ambient temperature Ta ( C)oFig.11 Frequency ResponseVCE=2VIC=2mA25 Co)0Ta=Bd( vA niag eg-10atloRL=10k1k100V-200.020.1110100Frequency f (kHz)

12/07/01 Appendix to Mini Flat Pack FPD-AAS/A1

Fig.8 Collector-emitter Saturation Voltagevs. Ambient Temperature1.0IF=20mAegIC=1mAatl0.8ov noita0.6rutas re0.4ttim)eV-(r o)ttca0.2es(lloECCV 020406080100Ambient temperature Ta ( C)oFig.10 Response Time vs. LoadResistance500VCE=2V200IC=10mAtrTa=25 Cotf)100s50( em20i10tdt esno5ptsseR210.50.20.050.10.20.512510Load resistance RL(k)Test Circuit for Response TimeVccInputOutputInputRDRLOutput10%90%tdtstrtfTest Circuit for Frequency ResponseVccRDRLOutput 元器件交易网www.cecb2b.com

TEMPERATURE PROFILE OF SOLDERING REFLOW

(1) One time soldering reflow is recommended within the condition of temperature and time profile

shown below.

30 seconds230 C200 C180 C1 minute25 C2 minutes1.5 minutes1 minute (2) When using another soldering method such as infrated ray lamp, the temperature may rise

partially in the mold of the device.

Keep the temperature on the package of the device within the condition of above (1).

12/07/01 Appendix to Mini Flat Pack FPD-AAS/A1