专利名称：Method of manufacturing a FeRAM with
annealing process
发明人：Tatsuya Yokota申请号：US10460248申请日：20030613公开号：US06908867B2公开日：20050621
专利附图：
摘要：There are contained the steps of forming sequentially a first conductive film, adielectric film, and a second conductive film on a first insulating film, forming an upperelectrode of a capacitor by patterning the second conductive film, patterning the
dielectric film to leave under the upper electrode, forming a lower electrode of thecapacitor by patterning the first conductive film, covering the capacitor and the firstinsulating film with a second insulating film, and annealing at least one of the firstinsulating film and the second insulating film in an inert-gas atmosphere and thenexposing the film to an NO plasma.
申请人：Tatsuya Yokota
地址：Kawasaki JP
国籍：JP
代理机构：Westerman, Hattori, Daniels & Adrian, LLP
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