Structure of metal gate and fabrication method the

专利名称：Structure of metal gate and fabrication

method thereof

发明人：Cheng-Yu Ma,Wen-Han Hung申请号：US13161512申请日：20110616公开号：US08673758B2公开日：20140318

专利附图：

摘要：A method for fabricating a metal gate includes the following steps. First, asubstrate having an interfacial dielectric layer above the substrate is provided. Then, agate trench having a barrier layer is formed in the interfacial dielectric layer. A source

layer is disposed above the barrier layer. Next, a process is performed to have at leastone element in the source layer move into the barrier layer. Finally, the source layer isremoved and a metal layer fills up the gate trench.

申请人：Cheng-Yu Ma,Wen-Han Hung

地址：Tainan TW,Kaohsiung TW

国籍：TW,TW

代理人：Winston Hsu,Scott Margo

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