IRF7304PBF;IRF7304TRPBF;中文规格书,Datasheet资料

IRF7304PbF

HEXFET® Power MOSFET

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Generation V TechnologyUltra Low On-ResistanceDual P-Channel MosfetSurface Mount

Available in Tape & ReelDynamic dv/dt RatingFast SwitchingLead-Free

S1G1S2G2123487D1D1D2D2VDSS = -20VRDS(on) = 0.090Ω65Top ViewDescription

Fifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistance per silicon area. Thisbenefit, combined with the fast switching speed and ruggedized device designthat HEXFET Power MOSFETs are well known for, provides the designer with anextremely efficient device for use in a wide variety of applications.The SO-8 has been modified through a customized leadframe for enhancedthermal characteristics and multiple-die capability making it ideal in a variety ofpower applications. With these improvements, multiple devices can be used inan application with dramatically reduced board space. The package is designedfor vapor phase, infra red, or wave soldering techniques. Power dissipation ofgreater than 0.8W is possible in a typical PCB mount application.

SO-8Absolute Maximum Ratings

Parameter

ID @ TA = 25°CID @ TA = 25°CID @ TA = 70°CIDM

PD @TA = 25°CVGSdv/dtTJ, TSTG

10 Sec. Pulsed Drain Current, VGS @ -4.5VContinuous Drain Current, VGS @ -4.5VContinuous Drain Current, VGS @ -4.5VPulsed Drain Current 󰀂Power DissipationLinear Derating FactorGate-to-Source Voltage

Peak Diode Recovery dv/dt 󰀃

Junction and Storage Temperature Range

Max.

-4.7-4.3-3.4-172.00.016±12-5.0-55 to + 150

Units

AWW/°CVV/ns°C

Thermal Resistance Ratings

Parameter

RθJA

Maximum Junction-to-Ambient󰀄

Typ.

󰀷󰀷󰀷

Max.

62.5

Units

°C/W

10/6/04

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IRF7304PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

ParameterDrain-to-Source Breakdown VoltageV(BR)DSS∆V(BR)DSS/∆TJBreakdown Voltage Temp. CoefficientRDS(ON)VGS(th)gfsIDSSIGSSQgQgsQgdtd(on)trtd(off)tfLDLSCissCossCrssStatic Drain-to-Source On-ResistanceGate Threshold VoltageForward TransconductanceDrain-to-Source Leakage CurrentGate-to-Source Forward LeakageGate-to-Source Reverse LeakageTotal Gate ChargeGate-to-Source ChargeGate-to-Drain (\"Miller\") ChargeTurn-On Delay TimeRise TimeTurn-Off Delay TimeFall TimeInternal Drain InductanceInternal Source InductanceInput CapacitanceOutput CapacitanceReverse Transfer CapacitanceMin.Typ.Max.Units Conditions-20󰀷󰀷󰀷󰀷󰀷󰀷VVGS = 0V, ID = -250µA󰀷󰀷󰀷-0.012󰀷󰀷󰀷V/°CReference to 25°C, ID = -1mA󰀷󰀷󰀷󰀷󰀷󰀷0.090VGS = -4.5V, ID = -2.2A 󰀅Ω󰀷󰀷󰀷󰀷󰀷󰀷0.140VGS = -2.7V, ID = -1.8A 󰀅-0.70󰀷󰀷󰀷󰀷󰀷󰀷VVDS = VGS, ID = -250µA4.0󰀷󰀷󰀷󰀷󰀷󰀷SVDS = -16V, ID = -2.2A󰀷󰀷󰀷󰀷󰀷󰀷-1.0VDS = -16V, VGS = 0VµA󰀷󰀷󰀷󰀷󰀷󰀷-25VDS = -16V, VGS = 0V, TJ = 125°C󰀷󰀷󰀷󰀷󰀷󰀷-100VGS = -12VnA󰀷󰀷󰀷󰀷󰀷󰀷100VGS = 12V󰀷󰀷󰀷󰀷󰀷󰀷22ID = -2.2A󰀷󰀷󰀷󰀷󰀷󰀷3.3nCVDS = -16V󰀷󰀷󰀷󰀷󰀷󰀷9.0VGS = -4.5V, See Fig. 6 and 12 󰀅󰀷󰀷󰀷8.4󰀷󰀷󰀷VDD = -10V󰀷󰀷󰀷26󰀷󰀷󰀷ID = -2.2Ans󰀷󰀷󰀷51󰀷󰀷󰀷RG = 6.0Ω󰀷󰀷󰀷33󰀷󰀷󰀷RD = 4.5Ω, See Fig. 10 󰀅󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷4.06.0610310170󰀷󰀷󰀷nH󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷pFDBetween lead tipand center of die contactVGS = 0VVDS = -15V󰁃 = 1.0MHz, See Fig. 5GSSource-Drain Ratings and CharacteristicsISISMVSDtrrQrrton ParameterContinuous Source Current(Body Diode)Pulsed Source Current(Body Diode) 󰀂Diode Forward VoltageReverse Recovery TimeReverse RecoveryChargeForward Turn-On TimeMin.Typ.Max.Units󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷󰀷5671-2.5A-17-1.084110VnsnC ConditionsDMOSFET symbolshowing theGintegral reversep-n junction diode.STJ = 25°C, IS = -1.8A, VGS = 0V 󰀅TJ = 25°C, IF = -2.2Adi/dt = 100A/µs 󰀅Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)Notes:

󰀁 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

󰀃Pulse width ≤ 300µs; duty cycle ≤ 2%.

TJ ≤ 150°C

󰀂ISD ≤ -2.2A, di/dt ≤− 50A/µs, VDD ≤ V(BR)DSS,

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100 VGS TOP - 7.5V - 5.0V - 4.0V)A - 3.5V( - 3.0V t - 2.5Vn - 2.0Vre BOTTOM - 1.5Vr10Cu ecruoS-ot-nia1rD , D -1.5VI- 20µs PULSE WIDTH0.1 T = 25°CJA0.010.1110100-V , Drain-to-Source Voltage (V)DSFig 1. Typical Output Characteristics100)A( tnerrT = 25°CJuT = 150°CC10J ecruoS-ot-n1air D, DI- V = -15V0.1 20µs PULSE WIDTHDS1.52.02.53.03.54.04.55.0A-V , Gate-to-Source Voltage (V)GSFig 3. Typical Transfer Characteristics

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IRF7304PbF

100 VGS TOP - 7.5V - 5.0V - 4.0V)A - 3.5V( - 3.0V t - 2.5Vne - 2.0V BOTTOM - 1.5Vrru10C ecruoS-ot-nia1rD -1.5V , ID- 20µs PULSE WIDTH0.1 T = 150°CJ0.010.1110100A-V , Drain-to-Source Voltage (V)DSFig 2. Typical Output Characteristics

2.0I = -3.6AD1.5)edzila1.0mroN(0.5)no(DS0.0 V = -4.5VGS-60-40-20020406080100120140160AT , Junction Temperature (°C)JFig 4. Normalized On-Resistance

Vs. Temperature

R , Drain-to-Source On ResistanceIRF7304PbF

1500V = 0V, f = 1MHzC = C + C , C SHORTEDGSC = Ciss gs gd dsC = C + Crss gdoss ds gd)FCissp( 1000ecanCossticaCrss Cap,C5000110100-V , Drain-to-Source Voltage (V)DSFig 5. Typical Capacitance Vs.Drain-to-Source Voltage100)A( tenrruC 10nT = 150°CiJarDT = 25°C JesrveeR 1, D IS-0.1V = 0VGSA0.30.60.91.21.5-V , Source-to-Drain Voltage (V)SDFig 7. Typical Source-Drain DiodeForward Voltage

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10 I = -2.2A V = -16VD) DSV( ge8atloV ec6rouS-ot-e4tGa , S G2V- FOR TEST CIRCUIT 0 SEE FIGURE 12A0510152025Q , Total Gate Charge (nC)GFig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100OPERATION IN THIS AREA LIMITEDBY RDS(on) 101msD TA= 25 C°10ms T° 1 Single PulseJ= 150 C 1 10 100-V , Drain-to-Source Voltage (V)DSFig 8. Maximum Safe Operating AreaA-I , Drain Current (A)IRF7304PbF

VDS5.0RDVGSRGD.U.T.+-VDD

4.0-ID , Drain Current (A)-4.5 V3.0Pulse Width ≤ 1 µsDuty Factor ≤ 0.1 %Fig 10a. Switching Time Test Circuit

2.0VDS90%1.00.02550°T , Case Temperature( C)C7510012515010%VGStd(on)trtd(off)tfFig 9. Maximum Drain Current Vs.Ambient Temperature

Fig 10b. Switching Time Waveforms

100Thermal Response(Z t h A )JD = 0.500.20 100.100.050.02 10.01SINGLE PULSE(THERMAL RESPONSE)PDMt1t2Notes:1. Duty factor D =t / t122. Peak TJ=PDMx ZthJA+ TA0.0010.010.1 1 10 1000.10.0001t , Rectangular Pulse Duration (sec)1Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambienthttp://oneic.com/

IRF7304PbF

QG-4.5 VQGSQGDVGChargeFig 12a. Basic Gate Charge Waveformhttp://oneic.com/

CurrentRegulatorSameTypeasD.U.T.50KΩ12V.2µF.3µF-D.U.T.+VDSVGS-3mAIGIDCurrentSamplingResistorsFig 12b. Gate Charge Test Circuit

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IRF7304PbF

Peak Diode Recovery dv/dt Test Circuit

D.U.T+Circuit Layout Considerations • Low Stray Inductance󰀃 • Ground Plane • Low Leakage Inductance Current Transformer-+󰀂--󰀄+󰀁**RG• dv/dt controlled by R+• I controlled by Duty Factor \"D\"G• D.U.T. - Device Under TestSD-VDD

*

VGS*

* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Driver Gate DriveP.W.PeriodD = P.W.Period[ ] ***VGS=10VD.U.T. ISDWaveformReverseRecoveryCurrentBody Diode ForwardCurrentdi/dtD.U.T. VDSWaveformDiode Recoverydv/dt[ ]VDDRe-AppliedVoltageBody Diode Forward DropInductor CurentRipple ≤5%[ ]ISD*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 13. For P-Channel HEXFETS

IRF7304PbF

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Dimensions are shown in milimeters (inches)INCHESMILLIMETERSDBDIMMINMAXMINMAXA5A.0532.06881.351.75A1.0040.00980.100.25765b.013.0200.330.5168Hc.0075.00980.190.25E.189.19684.805.0012340.25 [.010] ADE.1497.15743.804.00e.050 BASIC1.27 BASICe1.025 BASIC0.635 BASICH.2284.24405.806.206XeK.0099.01960.250.50L.016.0500.401.27y 0° 8° 0° 8°e1AK x 45°CyA10.10 [.004] 8X b8X L8X c0.25 [.010] CAB7NOTES:FOOTPRINT1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.2. CONTROLLING DIMENSION: MILLIMETER8X 0.72 [.028]3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.5 DIMENS MOLD PROTRUSIONS NOT TO EXCION DOES NOT INCLUDE MEED 0.15 [.006].OLD PROTRUSIONS.6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.6.46 [.255] MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.3X 1.27 [.050]8X 1.78 [.070]SO-8 Part Marking Information (Lead-Free)EXAMPLE: THIS IS AN IRF7101 (MOSFET)DATE CODE (YWW)P = DESPRODUCT (OPTIONAL)IGNATES LEAD-FREEY =INTERNATIONALXXXXWW = LAST DIGIT OF THE YEARA = AS WEEKSEMBLY SITE CODERECTIFIERF7101LOGOLOT CODEPART NUMBERIRF7304PbF

SO-8 Tape and Reel

Dimensions are shown in milimeters (inches)

TERMINAL NUMBER 112.3 ( .484 )11.7 ( .461 )8.1 ( .318 )7.9 ( .312 )FEED DIRECTIONNOTES:1. CONTROLLING DIMENSION : MILLIMETER.2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00(12.992) MAX.14.40 ( .566 )12.40 ( .488 )NOTES :1. CONTROLLING DIMENSION : MILLIMETER.2. OUTLINE CONFORMS TO EIA-481 & EIA-541.Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

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IRF7304PBF

IRF7304TRPBF