专利名称:Semiconductor integrated circuit,
programmable logic device, method ofmanufacturing semiconductor integratedcitcuit
发明人:Koichiro Zaitsu,Kosuke Tatsumura,Mari
Matsumoto
申请号:US13622015申请日:20120918公开号:US08860459B2公开日:20141014
专利附图:
摘要:According to one embodiment, a semiconductor integrated circuit includesnonvolatile memory areas, each includes a first nonvolatile memory transistor, a secondnonvolatile memory transistor and an output line, the first nonvolatile memory transistorincludes a first source diffusion region, a first drain diffusion region and a first controlgate electrode, the second nonvolatile memory transistor includes a second sourcediffusion region, a second drain diffusion region and a second control gate electrode, theoutput line connected the first drain diffusion region and the second drain diffusionregion, and logic transistor areas, each includes a logic transistor, the logic transistorincludes a third source diffusion region, a third drain diffusion region and a first gateelectrode.
申请人:Koichiro Zaitsu,Kosuke Tatsumura,Mari Matsumoto
地址:Kawasaki JP,Kawasaki JP,Yokohama JP
国籍:JP,JP,JP
代理机构:Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
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