tda2009a功放

10 +10W STEREO AMPLIFIER

.....

HIGH OUTPUT POWER(10 + 10W Min. @ D = 1%)

HIGH CURRENT CAPABILITY (UP TO 3.5A)AC SHORT CIRCUIT PROTECTIONTHERMAL OVERLOAD PROTECTION

SPACE AND COST SAVING : VERY LOWNUMBER OF EXTERNAL COMPONENTSAND SIMPLE MOUNTING THANKS TO THEMULTIWATT ® PACKAGE.

MULTIWATT11ORDERING NUMBER : TDA2009ADESCRIPTION

The TDA2009A is class AB dual Hi-Fi Audio poweramplifier assembled in Multiwatt ® package, spe-cially designed for high quality stereo applicationas Hi-Fi and music centers.PIN CONNECTION

May 19951/12

SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

SymbolVsIoIoPtotTstg, TjSupply VoltageOutput Peak Current (repetitive f ≥ 20 Hz)Output Peak Current (non repetitive, t = 100 µs)Power Dissipation at Tcase = 90 °CStorage and Junction TemperatureParameterValue283.54.520– 40, + 150UnitVAAW°CTHERMAL DATA

SymbolRth j-caseParameterThermal Resistance Junction-caseMax.Value3Unit°C/WELECTRICAL CHARACTERISTICS

(refer to the stereo application circuit, Tamb = 25oC, VS = 24V, GV = 36dB, unless otherwise specified)

SymbolVsVoIdPoSupply VoltageQuiescent Output VoltageTotal Quiescent Drain CurrentOutput Power (each channel)Vs = 24VVs = 24Vd = 1%, Vs = 24V, f = 1kHzRL = 4ΩRL = 8Ωf = 40Hz to 12.5kHzRL = 4ΩRL = 8ΩVs = 18V, f = 1kHzRL = 4ΩRL = 8Ωf = 1kHz, Vs = 24VPo = 0.1 to 7WPo = 0.1 to 3.5WVs = 18VPo = 0.1 to 5WPo = 0.1 to 2.5WRL = ∞, Rg = 10kΩf = 1kHzf = 10kHz300f = 1kHz, Non Inverting InputRL = 4ΩRL = 4Ωf = 1kHzRg = 10kΩ (1)Rg = 10kΩ (2)Rg = 10kΩfripple = 100Hz, Vripple = 0.5V35.5702002080360.51.52.555145836.5RL = 4ΩRL = 8ΩRL = 4 ΩRL = 8ΩParameterTest ConditionsMin.811.56012.57105740.20.10.20.16050120Typ. Max. 28UnitVVmAWWWWWW%%%%dBmVkΩHzkHzdBdBµVµVdB°CdDistortion (each channel)CTViRifLfHGv∆GveNSVRTJNotes :1.2.Cross Talk (3)Input Saturation Voltage (rms)Input ResistanceLow Frequency Roll off (– 3dB)High Frequency Roll off (– 3dB)Voltage Gain (closed loop)Closed Loop Gain MatchingTotal Input Noise VoltageSupply Voltage Rejection (each channel)Thermal Shut-down Junction TemperatureCurve A22Hz to 22kHzFigure 1 : Test and Application Circuit (GV = 36dB)

Figure 2 : P.C. board and component layout of the fig. 1

Figure 3 :Output Power versus Supply VoltageFigure 4 :Output Power versus Supply Voltage

Figure 5 :Distortion versus Output PowerFigure 6 :Distortion versus Frequency

Figure 7 :Distortion versus FrequencyFigure 8 :

Quiescent Current versusSupply Voltage

Figure 9 :

Supply Voltage Rejection versusFrequencyFigure 10 :Total Power Dissipation and

Efficiency versus Output Power

Figure 11 :Total Power Dissipation and

Efficiency versus Output Power

APPLICATION INFORMATIONFigure 12 : Example of Muting Circuit

Figure 13 : 10W +10W Stereo Amplifier with Tone Balance and Loudness Control

Figure 14 :Tone Control Response

(circuit of Figure 13)

Figure 15 : High Quality 20 + 20W Two Way Amplifier for Stereo Music Center (one channel only)

Figure 16 : 18W Bridge Amplifier (d = 1%, GV = 40dB)

Figure 17 : P.C. BOARD and Components Layout of the Circuit of Figure 16 (1:1 scale)

APPLICATION SUGGESTION

The recommended values of the components are those shown on application circuit of fig. 1. Differentvalues can be used ; the following table can help the designer.

ComponentR1, R3R2, R4R5, R6C1, C2C3C6, C7C8, C9C10, C11RecommendedValue1.2kΩ18kΩ1Ω2.2µF22µF220µF0.1µF1000µF to2200µFPurposeClose Loop GainSetting (1)Frequency StabilityInput DC DecouplingRipple RejectionFeedback Input DCDecouplingFrenquency StabilityOutput DCDecouplingLarger thanIncrease of GainDecrease of GainDanger of Oscillation at HighFrequency with Inductive LoadHigh Turn-on DelayBetter SVR. Increase of theSwitch-on TimeSmaller thanDecrease of GainIncrease of GainHigh Turn-on Pop.Higher Low FrequencyCut-off. Increase of NoiseDegradation of SVRDanger of OscillationHigher Low-frequencyCut-off(1) The closed loop gain must be higher than 26dB.BUILD-IN PROTECTION SYSTEMSTHERMAL SHUT-DOWN

The presence of a thermal limiting circuit offers thefollowing advantages:

1)an averload on the output (even if it ispermanent), or an excessive ambienttemperature can be easily withstood.

2)the heatsink can have a smaller factor of safetycompared with that of a conventional circuit.There is no device damage in the case ofexcessive junction temperature : all thathappens is that Po (and therefore Ptot) and Io arereduced.

The maximum allowable power dissipation de-pends upon the size of the external heatsink (i.e.its thermal resistance); Figure 18 shows this dissi-pable power as a function of ambient temperaturefor different thermal resistance.

Short circuit (AC Conditions). The TDA2009A canwithstand an accidental short circuit from the outputand ground made by a wrong connection duringnormal play operation.

MOUNTING INSTRUCTIONS

The power dissipated in the circuit must be re-moved by adding an external heatsink.

Thanks to the MULTIWATT ® package attachingFigure 18 :Maximum Allowable Power Dissipa-tion versus Ambient Temperature

the heatsink is very simple, a screw or a compres-sion spring (clip) being sufficient. Between theheatsink and the package it is better to insert a layerof silicon grease, to optimize the thermal contact ;no electrical isolation is needed between the twoFigure 19 :Output Power versus Case

Temperature

Figure 20 :Output Power and Drain Current ver-sus Case Temperature

MULTIWATT11 PACKAGE MECHANICAL DATA

DIM.ABCDEFGG1H1H2LL1L2L3L4L7MM1SS1Dia1MIN.mmTYP.MAX.52.651.60.550.951.9517.2520.222.522.518.117.7510.92.94.855.432.62.63.85MIN.inchTYP.MAX.0.1970.1040.0630.0220.0370.0770.6790.7950.8860.8860.7130.6990.4290.1140.1910.2140.1020.1020.15210.490.881.4516.7519.621.921.717.417.2510.32.654.254.731.91.93.650.0190.0350.0570.6590.7720.8620.8540.6850.6790.4060.1040.1670.1860.0750.0750.1440.0391.7170.0670.66922.222.117.510.74.555.080.8740.870.6890.4210.1790.200Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for theconsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. Nolicense is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentionedin this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without expresswritten approval of SGS-THOMSON Microelectronics.

© 1994 SGS-THOMSON Microelectronics - All Rights Reserved

SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore -Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A.