METHOD OF MANUFACTURING AN INTERCONNECT STRUCTURE

专利名称：METHOD OF MANUFACTURING AN

INTERCONNECT STRUCTURE HAVING APASSIVATION LAYER FOR PREVENTINGSUBSEQUENT PROCESSING REACTIONS

发明人：Kurt G. Steiner,Susan C. Vitkavage申请号：US09727195申请日：20001130

公开号：US20020064940A1公开日：20020530

专利附图：

摘要：The present invention provides a method of manufacturing an interconnect

structure within a substrate. The method includes forming an opening in a substrate,which may be a dielectric layer having a low k; for example, one where the dielectricconstant ranges from about 3.9 to about 1.9. This method further includes forming apassivation layer within the opening and a photoresist within the opening and over thepassivation layer. The passivation layer substantially or completely inhibits the diffusionof elements from the substrate that can deactivate a photo acid generator (PAG) withinthe photoresist, which prevents the photoresist from developing properly.

申请人：STEINER KURT G.,VITKAVAGE SUSAN C.

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