Guarding ring structure of a high voltage device a

专利名称：Guarding ring structure of a high voltage

device and manufacturing method thereof

发明人：Deming Sun申请号：US14369190申请日：20121121公开号：US09224804B2公开日：20151229

专利附图：

摘要：The present invention provides a guarding ring structure of a semiconductorhigh voltage device and the manufacturing method thereof. The guarding ring structurecomprises a first N type monocrystalline silicon substrate (), a second N type

monocrystalline silicon substrate (), a discontinuous oxide layer (), a metal field plate (), adevice region (), multiple P+ type diffusion rings () and an equipotential ring (). Thesecond N type monocrystalline silicon substrate () is a single N type crystalline layerepitaxially formed on the first N type monocrystalline silicon substrate () and has lowerdoping concentration than the first N type monocrystalline silicon substrate (). N typediffusion rings () are embedded in the inner side of the P+ type diffusion rings () and arefully depleted at zero bias voltage. The guarding ring structure can achieve the samewithstand voltage with less area and design time.

申请人：SHANGHAI IC R&D CENTER CO., LTD.

地址：Shanghai CN

国籍：CN

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